unisonic technologies co., ltd 9n50k-mt power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r205-016.d 9a, 500v n-channel power mosfet ? description the utc 9n50k-mt is an n-channel mode power mosfet using utc?s advanced technology to provide customers planar stripe and dmos technology. this technology allows a minimum on-state resistance, superior swit ching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 9n50k-mt is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) < 0.85 ? @ v gs = 10 v, i d = 4.5 a * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 9n50kl-ta3-t 9N50KG-TA3-T to-220 g d s tube 9n50kl-tf3-t 9n50kg-tf3-t to-220f g d s tube 9n50kl-tf1-t 9n50kg-tf1-t to-220f1 g d s tube 9n50kl-tf2-t 9n50kg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source (1) t: tube (2) ta3: to-220, tf3: to-220f, tf1: to-220f1, tf2: to-220f2 (3) l: lead free, g: halogen free and lead free 9n50kl-ta3-t (1)packing type (2)package type (3)green package
9n50k-mt power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r205-016.d ? marking
9n50k-mt power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r205-016.d ? absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous (t c =25c) i d 9 (note 5) a drain current pulsed (note 2) i dm 36 (note 5) a avalanche energy single pulsed (note 3) e as 360 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 140 w power dissipation to-220f/to-220f1 to-220f2 p d 47 w to-220 1.1 w/c derate above 25c to-220f/to-220f1 to-220f2 p d 0.38 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 8mh, i as = 9a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 9a, di/dt 200a/s, v dd bv dss , starting t j = 25c 5. drain current limited by maximum junction temperature ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w to-220 0.8 c/w junction to case to-220f/to-220f1 to-220f2 jc 2.62 c/w
9n50k-mt power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r205-016.d ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v v ds =500v, v gs =0v 1 drain-source leakage current i dss v ds =400v, t c =125c 10 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =4.5a 0.85 ? dynamic parameters input capacitance c iss 685 pf output capacitance c oss 115 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 12 pf switching parameters turn-on delay time t d(on) 62 ns rise time t r 86 ns turn-off delay time t d(off) 149 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 83 ns total gate charge q g 27.2 nc gate to source charge q gs 8.4 nc gate to drain charge q gd v ds =50v, i d =1.3a, v gs =10v (note 1, 2) 6.8 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s 9 a maximum body-diode pulsed current i sm 36 a drain-source diode forward voltage v sd i s =9a, v gs =0v 1.4 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature.
9n50k-mt power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r205-016.d ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
9n50k-mt power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r205-016.d ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
9n50k-mt power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r205-016.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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